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P1260ETF

Part Number	P1260ETF
Manufacturer	UNIKC
Description	N-Channel MOSFET
Published	May 14, 2020
Detailed Description	P1260ETF / P1260ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 670mΩ @VGS = 10V ID 1...
Datasheet	P1260ETF PDF File

Overview

P1260ETF / P1260ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 670mΩ @VGS = 10V ID 12A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 12 7.
6 48 7.
3 264 Power Dissipation TC = 25 °C TC = 100 °C PD 48 19 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited...

Similar Datasheet

P1260ETF N-Channel MOSFET - NIKO-SEM
P1260ETF N-Channel MOSFET - UNIKC
P1260ETFS N-Channel MOSFET - NIKO-SEM
P1260ETFS N-Channel MOSFET - UNIKC

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