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P1260ETFS

UNIKC
Part Number P1260ETFS
Manufacturer UNIKC
Description N-Channel MOSFET
Published May 14, 2020
Detailed Description P1260ETF / P1260ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 670mΩ @VGS = 10V ID 1...
Datasheet PDF File P1260ETFS PDF File

P1260ETFS
P1260ETFS

Overview
P1260ETF / P1260ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 670mΩ @VGS = 10V ID 12A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 12 7.
6 48 7.
3 264 Power Dissipation TC = 25 °C TC = 100 °C PD 48 19 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V, L = 10mH, starting TJ = 25°C SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.
6 62.
5 UNITS °C / W REV 1.
0 1 2017/2/6 P1260ETF / P1260ETFS N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±30V 600 2 2.
8 4 ±100 Gate Voltage Drain Current Drain-Source On-State Resistance1 IDSS RDS(ON) VDS = 600V, VGS = 0V, TC = 25 °C VDS = 480V, VGS = 0V , TC = 100 °C VGS = 10V, ID = 6A 1 10 518 670 Forward Transconductance1 gfs VDS = 10V, ID = 6A 15 DYNAMIC Input Capacitance Ciss 2023 Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz 172 Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge2 Gate-Drain Charge2 Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Crss Qg Qgs Qgd td(on) tr td(off) tf VDD =480V, VGS = 10V, ID = 12A VDD = 300V, ID = 12A, RG= 25Ω 9 44 9 14 41 54 169 93 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS Forward Voltage1 VSD IF...


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