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SST2611B

SeCoS
Part Number SST2611B
Manufacturer SeCoS
Description P-Channel MOSFET
Published May 19, 2020
Detailed Description Elektronische Bauelemente SST2611B -2.4A , -60V , RDS(ON) 175 mΩ P-Channel Enhancement Mode MOSFET RoHS Compliant Prod...
Datasheet PDF File SST2611B PDF File

SST2611B
SST2611B

Overview
Elektronische Bauelemente SST2611B -2.
4A , -60V , RDS(ON) 175 mΩ P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SST2611B utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial applications.
FEATURES Simple Drive Requirement Smaller Outline Package Surface mount package MARKING 2611B Date Code PACKAGE INFORMATION Package MPQ SOT-26 3K Leader Size 7 inch SOT-26 D H AC EL BJ K FG REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
60 3.
00 1.
20 REF.
1.
40 1.
80 0.
95 REF.
0.
60 REF.
REF.
G H J K L Millimeter Min.
Max.
0.
37 REF.
0.
30 0.
55 -0.
12 REF.
- 0.
10 TOP VIEW ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current @ VGS=10V 1 Pulsed Drain Current 2 Power Dissipation 3 TA=25°C TA=70°C TA=25°C ID IDM PD Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Thermal Resistance Rating Maximum Junction to Ambient 1 RθJA Ratings -60 ±20 -2.
4 -1.
7 -4.
5 1.
1 0.
009 -55~150 110 Unit V V A A W W / °C °C °C / W http://www.
SeCoSGmbH.
com/ 16-Mar-2015 Rev.
A Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente SST2611B -2.
4A , -60V , RDS(ON) 175 mΩ P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS -60 - - V VGS=0, ID= -250uA Gate-Threshold Voltage VGS(th) -1 - -3 V VDS=VGS, ID= -250uA Gate-Body Leakage Current IGSS - - ±100 nA VGS=±20V TJ=25°C - - -1 Drain-Source Leakage Current IDSS µA VDS= -48V, VGS=0 TJ=55°C - - -5 Drain-Source On-Resistance 2 RDS(ON) - - 175 VGS= -10V, ID= -2A ...


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