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SST2610

SeCoS
Part Number SST2610
Manufacturer SeCoS
Description N-Channel Enhancement Mode Power MosFET
Published Jul 2, 2009
Detailed Description www.DataSheet4U.com SST2610 3 A, 60 V, RDS(ON) 90 mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelement...
Datasheet PDF File SST2610 PDF File

SST2610
SST2610

Overview
www.
DataSheet4U.
com SST2610 3 A, 60 V, RDS(ON) 90 mΩ N-Channel Enhancement Mode Power Mos.
FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION z z The SST2610 uses advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
It is universally used for all commercial-industrial applications.
APPLICATIONS z z Low on-resistance Capable of 2.
5V gate drive PACKAGE INFORMATION REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
60 3.
00 1.
40 1.
80 0.
30 0.
55 0 0.
10 0 10 REF.
G H I J K L Millimeter Min.
Max.
1.
90 REF.
1.
20 REF.
0.
12 REF.
0.
37 REF.
0.
60 REF.
0.
95 REF.
ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current VGS@4.
5V, TA=25℃ 3 Continuous Drain Current VGS@4.
5V, TA=70℃ Pulsed Drain Current 1,2 Power Dissipation TA=25℃ Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID ID ID PD Tj, Tstg Ratings 60 ±20 3.
0 2.
3 10 2 0.
016 -55 ~ +150 Unit V V A A A W W/ ℃ ℃ THERMAL DATA Parameter Thermal Resistance Junction-ambient 3 Symbol Max.
Ratings 62.
5 Unit ℃ / W RθJA 01-June-2005 Rev.
A Page 1 of 4 www.
DataSheet4U.
com SST2610 3 A, 60 V, RDS(ON) 90 mΩ N-Channel Enhancement Mode Power Mos.
FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Forward Transconductance Gate Leakage Current Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current (TJ=25℃) Symbol BVDSS ΔBVDSS /ΔTJ VGS(th) Min.
60 1.
0 - Typ.
0.
05 5.
0 - Max.
3.
0 ±100 10 25 90 120 Unit V V/ V S ℃ Test Conditions VGS = 0, ID = 250uA Reference to 25℃, ID=1mA VDS=VGS, ID=250uA VDS = 5V, ID=3A VGS= ±20V VDS=60V, VGS=0 VDS=48V, VGS=0 gfs IGSS IDSS nA Drain-Source Leakage Current (TJ=70℃) Static Drain-Source On-Resistance Total Gate Charge 2 RDS(ON) Qg...


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