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KDV257E

KEC
Part Number KDV257E
Manufacturer KEC
Description VARIABLE CAPACITANCE DIODE
Published May 28, 2020
Detailed Description SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES Low Series Resistance : rs=0.50 (Max.) MAXIMUM RATING (Ta=2...
Datasheet PDF File KDV257E PDF File

KDV257E
KDV257E

Overview
SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND.
FEATURES Low Series Resistance : rs=0.
50 (Max.
) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage VR Junction Temperature Tj Storage Temperature Range Tstg RATING 10 150 -55 150 UNIT V KDV257E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK B A C 1 2 D 1.
ANODE 2.
CATHODE E F DIM A B C D E F MILLIMETERS 1.
60 +_0.
10 1.
20 +_0.
10 0.
80 +_0.
10 0.
30+_ 0.
05 0.
60+_ 0.
10 0.
13+_ 0.
05 ESC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage VR Reverse Current IR Capacitance C1V C2V Capacitance Ratio K Series Resistance rS TEST CONDITION IR=1 A VR=10V VR=1V, f=1MHz VR=2V, f=1MHz VR=1V, f=470MHz MIN.
10 19.
5 14.
3 1.
3 - TYP.
- MAX.
10 23.
5 17.
6 0.
5 UNIT V nA pF Marking Type Name EA 2001.
6.
11 Revision No : 0 1/2 REVERSE CURRENT I R (pA) CAPACITANCE C (pF) 100 Ta=25 C IR - VR 10 KDV257E 100 10 C - VR f=1MHz Ta=25 C 1 0 2 4 6 8 10 REVERSE VOLTAGE VR (V) 1 0 2 4 6 8 10 REVERSE VOLTAGE VR (V) 2001.
6.
11 Revision No : 0 2/2 ...


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