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TIM7785-60SL

Toshiba
Part Number TIM7785-60SL
Manufacturer Toshiba
Description MICROWAVE POWER GaAs FET
Published Jun 19, 2020
Detailed Description MICROWAVE POWER GaAs FET TIM7785-60SL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 48.0dBm at 7.7GHz to...
Datasheet PDF File TIM7785-60SL PDF File

TIM7785-60SL
TIM7785-60SL

Overview
MICROWAVE POWER GaAs FET TIM7785-60SL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 48.
0dBm at 7.
7GHz to 8.
5GHz ŋHIGH GAIN G1dB= 7.
5dB at 7.
7GHz to 8.
5GHz ŋLOW INTERMODULATION DISTORTION IM3(MIN.
)= -45dBc at Pout= 36.
5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 9.
5A f= 7.
7 to 8.
5GHz UNIT dBm dB A dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Test P...


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