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TIM5359-4UL

Toshiba
Part Number TIM5359-4UL
Manufacturer Toshiba
Description MICROWAVE POWER GaAs FET
Published Jun 20, 2020
Detailed Description FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 5.3GHz to 5.9GHz ･HIGH GAIN G1dB= 10.5dB at 5.3...
Datasheet PDF File TIM5359-4UL PDF File

TIM5359-4UL
TIM5359-4UL

Overview
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.
5dBm at 5.
3GHz to 5.
9GHz ･HIGH GAIN G1dB= 10.
5dB at 5.
3GHz to 5.
9GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5359-4UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 ∆G VDS= 10V IDSset= 0.
9A f = 5.
3 to 5.
9GHz UNIT dBm dB A dB Power Added Efficiency ηadd % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 25.
5dBm, ∆f= 5MHz (Single Carrier Level) A Channel Temperature Rise ∆Tch (VDS X IDS + Pin – P1dB) X R...


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