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MRF6S21140HR3

NXP
Part Number MRF6S21140HR3
Manufacturer NXP
Description RF Power FET
Published Jul 10, 2020
Detailed Description Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs De...
Datasheet PDF File MRF6S21140HR3 PDF File

MRF6S21140HR3
MRF6S21140HR3

Overview
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
• Typical 2--carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 30 Watts Avg.
, f = 2112.
5 MHz, Channel Bandwidth = 3.
84 MHz, PAR = 8.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 15.
5 dB Drain Efficiency — 27.
5% IM3 @ 10 MHz Offset — --37 dBc in 3.
84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — --41 dBc in 3.
84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 140 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel.
R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6S21140H Rev.
5, 2/2010 MRF6S21140HR3 MRF6S21140HSR3 2110--2170 MHz, 30 W AVG.
, 28 V 2 x W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs CASE 465B--03, STYLE 1 NI--880 MRF6S21140HR3 CASE 465C--02, STYLE 1 NI--880S MRF6S21140HSR3 Table 1.
Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) VDSS --0.
5, +68 Vdc VGS --0.
5, +12 Vdc Tstg -- 65 to +150 °C TC 150 °C TJ 225 °C Table 2.
Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 80°C, 140 W CW Case Temperature 75°C, 30 W CW RθJC 0.
35 0.
38 °C/W 1.
Continuous use at maximum temperature will affect MTTF.
2.
MTTF calculator available at http://www.
freescale.
com/rf.
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