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10N65

LGE
Part Number 10N65
Manufacturer LGE
Description N-Channel MOSFET
Published Jul 28, 2020
Detailed Description 10N65 650V N-Channel MOSFET. General Description ShenZhen LuGuang Electronic Technology. Co., Ltd. Awarded ISO9001:2015...
Datasheet PDF File 10N65 PDF File

10N65
10N65

Overview
10N65 650V N-Channel MOSFET.
General Description ShenZhen LuGuang Electronic Technology.
Co.
, Ltd.
Awarded ISO9001:2015; ISO14001:2015; IATF16949:2016; Email:sales05@lgesemi.
com Web: www.
lgesemi.
com Tel: 0086-755-23981105 Fax: 0086-755-23981125 Mobile/WhatsApp:+86-18676792337 Skype ID: jokucn Features • 10A, 650V, RDS(on)=0.
63Ω @VGS=10 V • Low gate charge ( typical 45 nC) • Low Crss ( typical 12pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability This Power MOSFET is produced by HSDQ using its own advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies,active power factor correction based on half bridge topology.
TO-220F Package 2 1 12 3 1.
Gate 2.
Drain 3.
Source 3 Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current - Continuous (TC=25°C) - Continuous (TC=100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC=25°C) - Derate above 25°C Tj ,Tstg TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθJS Thermal Resistance, Case-to-Sink Typ.
RθJA Thermal Resistance, Junction-to-Ambient Value 650 10 6.
3* 40* ± 30 606 10 55 5 27.
5 0.
22 -55 to +150 300 Value 4.
54 -42.
2 Units V A A A V mJ A mJ V/ns W W/°C oC oC Units °C/W °C/W °C/W Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Conditions Min TaObflfeC2hMaraaxcimteurmistriactsings BVDS...


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