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SST2629S

SeCoS
Part Number SST2629S
Manufacturer SeCoS
Description P-CHANNEL MOSFET
Published Aug 3, 2020
Detailed Description Elektronische Bauelemente SST2629S -1.5A , -100V , RDS(ON) 550 mΩ P-Channel Enhancement Mode MOSFET RoHS Compliant Pro...
Datasheet PDF File SST2629S PDF File

SST2629S
SST2629S

Overview
Elektronische Bauelemente SST2629S -1.
5A , -100V , RDS(ON) 550 mΩ P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SST2629S utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial applications.
FEATURES Simple Drive Requirement Smaller Outline Package Surface mount package MARKING 2629S Date Code PACKAGE INFORMATION Package MPQ SOT-26 3K Leader Size 7 inch SOT-26 D H AC E L B J K F G REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
60 3.
00 1.
20 REF.
1.
40 1.
80 0.
95 REF.
0.
60 REF.
REF.
G H J K L Millimeter Min.
Max.
0.
37 REF.
0.
30 0.
55 - - 0.
12 REF.
- 0.
10 TOP VIEW ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current @ VGS=10V 1 TA=25°C ID TA=70°C Pulsed Drain Current 2 IDM Power Dissipation 3 TA=25°C PD Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Thermal Resistance Rating Maximum Junction to Ambient 1 RθJA Ratings -100 ±20 -1.
5 -1.
2 -5 1.
1 0.
009 -55~150 113 Unit V V A A W W / °C °C °C / W http://www.
SeCoSGmbH.
com/ 16-Mar-2015 Rev.
A Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente SST2629S -1.
5A , -100V , RDS(ON) 550 mΩ P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS -100 - - V VGS=0, ID= -250uA Gate-Threshold Voltage Gate-Body Leakage Current VGS(th) -1 IGSS - - -2.
5 V VDS=VGS, ID= -250uA - ±100 nA VGS=±20V TJ=25°C - - -1 Drain-Source Leakage Current IDSS µA VDS= -80V, VGS=0 TJ=55°C - - -5 Drain-Source On-Resistance 2 RDS(ON...


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