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SST2622

SeCoS
Part Number SST2622
Manufacturer SeCoS
Description N-Channel MOSFET
Published Jul 2, 2009
Detailed Description www.DataSheet4U.com SST2622 520mA, 50V,RDS(ON) 1.8£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.F...
Datasheet PDF File SST2622 PDF File

SST2622
SST2622

Overview
www.
DataSheet4U.
com SST2622 520mA, 50V,RDS(ON) 1.
8£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.
FET SOT-26 Description 0.
37Ref.
0.
20 0.
60 Ref.
2.
60 3.
00 The SST2622 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.
The SOT-26 is universally used for all commercial-industrial applications.
0.
30 0.
55 0.
95 Ref.
2.
70 3.
10 0~0.
1 0.
25 1.
40 1.
80 0 o 10 o 1.
20Ref.
Features * RoHS Compliant * Low Gate Charge * Surface Mount Package D1 D2 Dimensions in millimeters D1 6 S1 5 D2 4 Date Code 2622 G1 G2 1 G1 2 S2 3 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 50 ±20 520 410 1.
5 0.
8 0.
006 -55~+150 Unit V V mA mA A W W/ C o o C Thermal Data Parameter Thermal Resistance Junction-ambient3 (Max) Symbol Rthj-a Ratings 150 o Unit C /W http://www.
SeCoSGmbH.
com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev.
A Page 1 of 4 www.
DataSheet4U.
com SST2622 520mA, 50V,RDS(ON) 1.
8 £[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.
FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C) Static Drain-Source On-Resistance2 o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min.
50 _ Typ.
_ Max.
_ _ Unit V V/ oC V uA uA uA Test Condition VGS=0V, ID= 250uA Reference to 25oC ,ID= 1mA VDS=VGS, ID=250uA VGS=± 20V VDS=50V,VGS=0 VDS= 40V,VGS=0 VGS=10V, ID=500mA 0.
06 _ _ _ _ 1.
0 _ _ _ _ 3.
0 ± 30 10 100 1...


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