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NE5511279A

CEL
Part Number NE5511279A
Manufacturer CEL
Description 7.5V OPERATION SILICON RF POWER LD-MOS FET
Published Aug 25, 2020
Detailed Description DISCONTINUED SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSIO...
Datasheet PDF File NE5511279A PDF File

NE5511279A
NE5511279A

Overview
DISCONTINUED SILICON POWER MOS FET NE5511279A 7.
5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.
5 V Radio Systems.
Dies are manufactured using our NEWMOS1 technology and housed in a surface mount package.
This device can deliver 40.
0 dBm output power with 48% power added efficiency at 900 MHz under the 7.
5 V supply voltage.
FEATURES • High output power • High power added efficiency • High linear gain • Surface mount package • Single supply : Pout = 40.
0 dBm TYP.
(f = 900 MHz, VDS = 7.
5 V, Pin = 27 dBm, IDset = 400 mA) : Pout = 40.
5 dBm TYP.
(f = 460 MHz, VDS = 7.
5 V, Pin = 25 dBm, IDset = 400 mA) : add = 48% TYP.
(f = 900 MHz, VDS = 7.
5 V, Pin = 27 dBm, IDset = 400 mA) : add = 50% TYP.
(f = 460 MHz, VDS = 7.
5 V, Pin = 25 dBm, IDset = 400 mA) : GL = 15.
0 dB TYP.
(f = 900 MHz, VDS = 7.
5 , Pin = 5 dBm V, IDset = 400 mA) : GL = 18.
5 dB TYP.
(f = 460 MHz, VDS = 7.
5 V, Pin = 5 dBm, IDset = 400 mA) : 5.
7  5.
7  1.
1 mm MAX.
: VDS = 2.
8 to 8.
0 V APPLICATIONS • 460 MHz Radio Systems • 900 MHz Radio Systems ORDERING INFORMATION Part Number NE5511279A-T1 NE5511279A-T1A Package 79A Marking W3 Supplying Form • 12 mm wide embossed taping • Gate pin face the perforation side of the tape • Qty 1 kpcs/reel • 12 mm wide embossed taping • Gate pin face the perforation side of the tape • Qty 5 kpcs/reel Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE5511279A-A Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No.
PU10322EJ01V0DS (1st edition) Date Published June 2003 CP(K) DISCONTINUED NE5511279A ABSOLUTE MAXIMUM RATINGS (TA = +25C) Operation in excess of any one of these parameters may result in permanent damage.
Parameter Drain to Source Voltage Gate to Source Voltage D...


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