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NE5511279A

NEC
Part Number NE5511279A
Manufacturer NEC
Description 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
Published Jul 9, 2007
Detailed Description NEC'S 7.5 V UHF BAND NE5511279A RF POWER SILICON LD-MOS FET FEATURES • HIGH OUTPUT POWER: Pout = 40.0 dBm TYP., f = 900 ...
Datasheet PDF File NE5511279A PDF File

NE5511279A
NE5511279A


Overview
NEC'S 7.
5 V UHF BAND NE5511279A RF POWER SILICON LD-MOS FET FEATURES • HIGH OUTPUT POWER: Pout = 40.
0 dBm TYP.
, f = 900 MHz, VDS = 7.
5 V, Pout = 40.
5 dBm TYP.
, f = 460 MHz, VDS = 7.
5 V, • HIGH POWER ADDED EFFICIENCY: ηadd = 48% TYP.
, f = 900 MHz, VDS = 7.
5 V, 5.
7 MAX.
0.
6±0.
15 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A (Bottom View) 4.
2 MAX.
Source 1.
5±0.
2 Source 21001 4.
4 MAX.
GL = 18.
5 dB TYP.
, f = 460 MHz, VDS = 7.
5 V, • SURFACE MOUNT PACKAGE: 5.
7 x 5.
7 x 1.
1 mm MAX • SINGLE SUPPLY: VDS = 2.
8 to 8.
0 V 0.
4±0.
15 5.
7 MAX.
0.
8 MAX.
3.
6±0.
2 W • HIGH LINEAR GAIN: GL = 15.
0 dB TYP.
, f = 900 MHz, VDS = 7.
5 V, APPLICATIONS • UHF RADIO SYSTEMS • CELLULAR REPEATERS • TWO-WAY RADIOS • FRS/GMRS • FIXED WIRELESS DESCRIPTION NEC's NE5511279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for 7.
5 V radio systems.
Die are manufactured using NEC's NEWMOS1 technology and housed in a surface mount package.
This device can deliver 40.
0 dBm output power with 48% power added efficiency at 900 MHz using a 7.
5 V supply voltage.
(TA = 25°C) MIN 38.
5 − 42 − − − − − − − 1.
0 − − 20 TYP 40.
0 2.
5 48 15.
0 40.
5 2.
75 50 18.
5 − − 1.
5 5 2.
3 24 MAX − − − − − − − − 100 100 2.
0 − − − UNIT dBm A % dB dBm A % dB nA nA V °C/W S V TEST CONDITIONS f = 900 MHz, VDS = 7.
5 V, Pin = 27 dBm, IDSQ = 400 mA (RF OFF) Pin = 5 dBm f = 460 MHz, VDS = 7.
5 V, Pin = 25 dBm, IDSQ = 400 mA (RF OFF) Pin = 5 dBm VGS = 6.
0 V VDS = 8.
5 V VDS = 4.
8 V, IDS = 1.
5 mA Channel to Case VDS = 3.
5 V, IDS = 900 mA IDSS = 15 µA ELECTRICAL CHARACTERISTICS SYMBOL Pout ID ηadd GL Pout ID ηadd GL IGSS IDSS Vth Rth gm BVDSS PARAMETER Output Power Drain Current Power Added Efficiency Linear Gain Output Power Drain Current Power Added Efficiency Linear Gain Gate to Source Leak Current Drain to Source Leakage Current (Zero Gate Voltage Drain Current) Gate Threshold Voltage Thermal Resistance Transconductance Drain to Source Breakdown Voltage Notes: DC performance is...


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