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EPC8010

EPC
Part Number EPC8010
Manufacturer EPC
Description Power Transistor
Published Aug 30, 2020
Detailed Description eGaN® FET DATASHEET EPC8010 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 160 mΩ ID , 4 A D G S EPC8010 ...
Datasheet PDF File EPC8010 PDF File

EPC8010
EPC8010

Overview
eGaN® FET DATASHEET EPC8010 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 160 mΩ ID , 4 A D G S EPC8010 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.
The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings PARAMETER VDS Drain-to-Source Voltage (Continuous) ID Continuous (TA = 25°C, RθJA = 27°C/W) Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Volta...


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