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EPC8009

Part Number	EPC8009
Manufacturer	EPC
Description	Power Transistor
Published	Aug 30, 2020
Detailed Description	eGaN® FET DATASHEET EPC8009 – Enhancement Mode Power Transistor VDS , 65 V RDS(on) , 130 mΩ ID , 4 A D G S EPC8009 E...
Datasheet	EPC8009 PDF File

Overview

eGaN® FET DATASHEET EPC8009 – Enhancement Mode Power Transistor VDS , 65 V RDS(on) , 130 mΩ ID , 4 A D G S EPC8009 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.
The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings PARAMETER VALUE UNIT Drain-to-Source Voltage (Continuous) 65 VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 125°C) 78 V ID Continu...

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