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EPC2016C

Part Number	EPC2016C
Manufacturer	EPC
Description	Power Transistor
Published	Aug 30, 2020
Detailed Description	eGaN® FET DATASHEET EPC2016C – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 16 mΩ ID , 18 A D G S EPC2016...
Datasheet	EPC2016C PDF File

Overview

eGaN® FET DATASHEET EPC2016C – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 16 mΩ ID , 18 A D G S EPC2016C EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.
The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings PARAMETER VALUE UNIT Drain-to-Source Voltage (Continuous) 100 V VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 120 V Co...

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