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STB21NM60ND

INCHANGE
Part Number STB21NM60ND
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 2, 2020
Detailed Description Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB21NM60ND ·FEATURES ·With To-263(D2PAK) package ·Low input ca...
Datasheet PDF File STB21NM60ND PDF File

STB21NM60ND
STB21NM60ND

Overview
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB21NM60ND ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=125℃ Drain Current-Single Pulsed ±25 17 10 68 PD Total Dissipation @TC=25℃ 140 Tch Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.
89 62.
5 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB21NM60ND ELECTRICAL CHARACTERISTIC...


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