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STB21NM60N-1

STMicroelectronics
Part Number STB21NM60N-1
Manufacturer STMicroelectronics
Description N-CHANNEL MOSFET
Published Jul 19, 2007
Detailed Description STP21NM60N-F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1 N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-220FP - D2PAK I2PAK -...
Datasheet PDF File STB21NM60N-1 PDF File

STB21NM60N-1
STB21NM60N-1

Overview
STP21NM60N-F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1 N-channel 600 V - 0.
17 Ω - 17 A TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh™ Power MOSFET Features Type VDSS (@Tjmax) RDS(on) max ID STB21NM60N )STB21NM60N-1 t(sSTF21NM60N cSTP21NM60N uSTW21NM60N 650 V 650 V 650 V 650 V 650 V < 0.
22 Ω < 0.
22 Ω < 0.
22 Ω < 0.
22 Ω < 0.
22 Ω 17 A 17 A 17 A(1) 17 A 17 A rod1.
Limited by maximum temperature allowed P■ 100% avalanche tested te■ Low input capacitance and gate charge le■ Low gate input resistance bsoApplication - O■ Switching applications t(s)Description ucThis series of devices implements the second dgeneration of MDmesh™ technology.
This rorevolutionary Power MOSFET associates a new Pvertical structure to the company’s strip layout to teyield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most Obsoledemanding high efficiency converters.
3 2 1 TO-220 3 2 1 TO-220FP 3 1 D2PAK 123 I2PAK 3 2 1 TO-247 Figure 1.
...


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