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2N6054

Part Number	2N6054
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 4, 2020
Detailed Description	INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6054 DESCRIPTION ·Built-in Base-Emitter Shunt R...
Datasheet	2N6054 PDF File

Overview

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6054 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·Low Collector-Emitter Saturation Voltage : VCE(sat) = -2.
0V(Max)@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) ·Complement to type 2N6056 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -8 A ICM ...

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