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2N6678

INCHANGE
Part Number 2N6678
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 4, 2020
Detailed Description isc Silicon NPN Power Transistors DESCRIPTION ·High Voltage Capability ·Fast Switching Speed ·Low Saturation Voltage ·M...
Datasheet PDF File 2N6678 PDF File

2N6678
2N6678


Overview
isc Silicon NPN Power Transistors DESCRIPTION ·High Voltage Capability ·Fast Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage switching applications such as: ·Off-line power supplies ·Converter circuits ·PWM regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 650 V VCEX Collector-Emitter Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8.
0 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 5.
0 A PC Collector Power Dissipat...



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