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2SB1136

Part Number	2SB1136
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 5, 2020
Detailed Description	INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1136 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V...
Datasheet	2SB1136 PDF File

Overview

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1136 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.
4V(Max.
)@ IC= -6A ·Complement to Type 2SD1669 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers,high-speed inverters,converters and other general high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak ...

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