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2SB1186

Part Number	2SB1186
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 5, 2020
Detailed Description	INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1186 DESCRIPTION ·High Collector-Emitter Breakdown Voltage...
Datasheet	2SB1186 PDF File

Overview

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1186 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.
) ·Good Linearity of hFE ·Complement to Type 2SD1763 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.
5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ ...

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