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2SC4116

Part Number	2SC4116
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·With SOT-323 packaging ·High collector-base voltage ·High power dissipati...
Datasheet	2SC4116 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·With SOT-323 packaging ·High collector-base voltage ·High power dissipation ·Low saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
15 A 0.
1 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4116 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO BVCEO BVEBO Collector-Base Breakdown Voltage IC= 0.
1mA ; IE= 0 Collector-Emitter Voltage Breakdown IC= 1mA ; IB= 0 Emitter-Base Breakdown Voltage IE= 0.
1mA ; IC=...

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