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2SD1763

Part Number	2SD1763
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1763 DESCRIPTION ·High Collector-Emitter Breakdown Voltage...
Datasheet	2SD1763 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1763 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min.
) ·Good Linearity of hFE ·Complement to Type 2SB1186 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 20 W 150 ℃ ...

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