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3DD101E

Part Number	3DD101E
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD101E DESCRIPTION ·With TO-3 packa...
Datasheet	3DD101E PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD101E DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 5 A PD Total Power Dissipation@TC=75℃ 50 W TJ Max.
Junction Temperature 175 ℃ Tstg Storage Temperature ...

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