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3DD13009

INCHANGE
Part Number 3DD13009
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 5, 2020
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : V...
Datasheet PDF File 3DD13009 PDF File

3DD13009
3DD13009


Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.
) ·Collector Saturation Voltage : VCE(sat) = 1.
5 (Max) @ IC= 8.
0A ·Switching Time : tf= 0.
7μs(Max.
)@ IC= 8.
0A ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switch mode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 12 A ICM Collector Current-peak 24 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 6 A 130 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ;IB= 1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A ;IB= 1.
6A VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 12A ;IB= 3A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A ;IB= 1A VBE(sat)-2 Base-Emitter Saturation Voltage IC= 8A ;IB= 1.
6A IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 5A; VCE= 5V hFE-2 DC Current Gain IC= 8A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.
5 A; VCE= 10V; COB Output Capacitance IE= 0; VCB= 10V; ftest = 0.
1MHz Switching Times; Resistive Load Ton Turn ON Time ts Storage Time IC= 8A; VCC= 125V; IB1= IB2= 1.
6A; RL=15.
6Ω; t...


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