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BD335

Part Number	BD335
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 6, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor BD335 DESCRIPTION ·High DC Current Gain ·Complement to type BD...
Datasheet	BD335 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD335 DESCRIPTION ·High DC Current Gain ·Complement to type BD336 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IBM PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 100 V 100 V 6 V 6 A 0.
15 A ...

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