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BD336

Part Number	BD336
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 6, 2020
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor BD336 DESCRIPTION ·High DC Current Gain ·Complement to type BD...
Datasheet	BD336 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor BD336 DESCRIPTION ·High DC Current Gain ·Complement to type BD335 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IBM PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range -100 V -100 V -6 V -6 A -0.
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