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BD337

Part Number	BD337
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 6, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor BD337 DESCRIPTION ·High DC Current Gain ·Complement to type BD...
Datasheet	BD337 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD337 DESCRIPTION ·High DC Current Gain ·Complement to type BD338 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IBM PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 120 V 120 V 6 V 6 A 0.
15 A 60 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.
08 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INC...

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