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BD652F

Part Number	BD652F
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 6, 2020
Detailed Description	isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor BD652F DESCRIPTION ·Collector-Emitter Breakdown Vol...
Datasheet	BD652F PDF File

Overview

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor BD652F DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD651F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICP Collector Current-Peak -12 A IB Base Current-Continuous Collector Power Dis...

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