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BDT61F

Part Number	BDT61F
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 7, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDT61F DESCRIPTION ·High DC Current Gain ·Low Satur...
Datasheet	BDT61F PDF File

Overview

...ation Voltage ·Complement to Type BDT60F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICP Collector Current-Peak 6 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
1 A 17 W 25 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

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