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BDY77

Part Number	BDY77
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 7, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Low Collecto...
Datasheet	BDY77 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Low Collector-Emitter Saturation Voltage ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, disk head positioners, linear amplifiers, switching regulators,solenoid drivers,and DC-DC converters or inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 16 A ICM Collector Current-Peak 30 A IB Base Current-Co...

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