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BUF405AF

Part Number	BUF405AF
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 8, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed...
Datasheet	BUF405AF PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.
) ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high reliability industrial and professional power driving applications such as motor drivers and off-line switching power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCEV Collector-Emitter Voltage VBE= -1.
5V 1000 VCEO Collector-Emitter Voltage 450 UNIT V V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7.
5 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 3 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4.
5 A 39 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.
2 ℃/W BUF405AF isc website：www.
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