DatasheetsPDF.com

BUF405AFP

ST Microelectronics
Part Number BUF405AFP
Manufacturer ST Microelectronics
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
Published Apr 17, 2005
Detailed Description ® BUF405A BUF405AFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s s s HIGH SWITCHING SPEED NPN POWER TR...
Datasheet PDF File BUF405AFP PDF File

BUF405AFP
BUF405AFP


Overview
® BUF405A BUF405AFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s s s HIGH SWITCHING SPEED NPN POWER TRANSISTORS EASY TO DRIVE HIGH VOLTAGE FOR OFF-LINE APPLICATIONS 100 KHz SWITCHING SPEED LOW COST DRIVE CIRCUITS LOW DYNAMIC SATURATION 3 3 1 2 APPLICATIONS: s SWITCH MODE POWER SUPPLIES s MOTOR DRIVERS DESCRIPTION These Easy-to-Drive FASTSWITCH NPN power transistors are specially designed for high reliability industrial and professional power driving applications such us motor drives and off-line switching power supplies.
ETD transistors will operate using easy drive circuits at up to 100KHz; this helps to simplify designs and improve reliability.
The superior switching performance and low crossover losses reduce dissipation and consequently lowers the equipment operating temperature.
1 2 TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CEV V CEO VEBO IC I CM IB I BM P tot T s tg Tj Parameter BUF405A Collector-Emitter Voltage (V BE = -1.
5 V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) o T otal Dissipation at T c = 25 C Storage Temperature Max O peration Junction T emperature 1000 450 7 7.
5 15 3 4.
5 80 -65 to 150 150 39 Valu e BUF405AF P V V V A A A A W o C o C Un it January 1999 1/6 BUF405A / BUF405AFP THERMAL DATA T O-220 R t hj-ca se Thermal Resistance Junction-Case Max 1.
56 TO-220F P 3.
2 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 5 Ω) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = V CEV V CE = V CEV T c = 100 C o Min.
Typ .
Max.
0.
1 0.
5 0.
1 0.
5 1 Un it mA mA mA mA mA V V V CE = V CEV V BE = -1.
5 V V CE = V CEV V BE = -1.
5 V T c =100 o C V BE = 5 V I C = 200 mA I E = 50 mA IC IC IC IC IC IC IC IC = = = = = = = = 2.
5 A 2.
5 A 5 A 5 A 2.
5 A...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)