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BUL312

INCHANGE
Part Number BUL312
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 8, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 500V(Min.) ·Low Collec...
Datasheet PDF File BUL312 PDF File

BUL312
BUL312

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 500V(Min.
) ·Low Collector Saturation Voltage : VCE(sat) = 0.
5V(Max) @ IC= 1A ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1150 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-peak tp<5ms 10 A IB Base Current-Continuous 3 A IBM Base Current-peak tp<5ms PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 4 A 75 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
65 ℃/W Rth j-A Thermal Resistance,Junction to Ambient 62.
5 ℃/W BUL312 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUL312 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; Ib=0 500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 9 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.
2A 0.
5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.
4A 0.
7 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.
6A 1.
1 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1A; IB= 0.
2A 1.
0 V VBE(sat)-2 Base-Emitter Saturation Voltage VBE(sat)-3 Base-Emitter Saturation Voltage ICES Collector Cutoff Current ICEO Collector Cutoff Current IC= 2A; IB= 0.
4A IC= 3A; IB= 0.
6A VCE=1150V; VBE= 0 VCE=1150V; VBE= 0, TC= 125℃ VCE= 500V; IB= 0 1.
1 V 1.
2 V 1.
0 2.
0 mA 0.
25 mA hFE-1 DC Current Gai...


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