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BUL312FP

ST Microelectronics
Part Number BUL312FP
Manufacturer ST Microelectronics
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Published Jan 16, 2006
Detailed Description ® BUL312FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNA...
Datasheet PDF File BUL312FP PDF File

BUL312FP
BUL312FP

Overview
® BUL312FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC LARGE RBSOA FULLY INSULATED PACKAGE (U.
L.
COMPLIANT) FOR EASY MOUNTING 1 2 3 APPLICATIONS HORIZONTAL DEFLECTION FOR TV s SMPS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s TO-220FP DESCRIPTION The BUL312FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot Visol T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p <5 ms) Base Current Base Peak Current (t p <5 ms) Total Dissipation at Tc = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max.
Operating Junction Temperature Value 1150 500 9 5 10 3 4 36 1500 -65 to 150 150 Unit V V V A A A A W V o o C C March 2004 1/6 BUL312FP THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 3.
5 62.
5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Test Conditions V CE = 1150 V V CE = 1150 V V CE = 500 V I C = 100 mA L= 25 mH 500 Tj = 125 o C Min.
Typ.
Max.
1 2 250 Unit mA mA µA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V EBO V CE(sat) ∗ Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain INDUCTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage T...


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