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KSC1173

INCHANGE
Part Number KSC1173
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 9, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Complement to Type KSA473 ·100% avalanc...
Datasheet PDF File KSC1173 PDF File

KSC1173
KSC1173

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Complement to Type KSA473 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Car radio,car stereo output stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 12.
5 UNIT ℃/W KSC1173 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS KSC1173 MIN TYP.
MAX UNIT V(...


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