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KSC1173

Fairchild Semiconductor
Part Number KSC1173
Manufacturer Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Published Apr 5, 2005
Detailed Description KSC1173 — NPN Epitaxial Silicon Transistor KSC1173 NPN Epitaxial Silicon Transistor Features • Low Frequency Power Ampl...
Datasheet PDF File KSC1173 PDF File

KSC1173
KSC1173

Overview
KSC1173 — NPN Epitaxial Silicon Transistor KSC1173 NPN Epitaxial Silicon Transistor Features • Low Frequency Power Amplifier, Power Regulator • Collector Current : IC=3A • Collector Dissipation : PC=10W (TC=25°C) • Complement to KSA473 August 2009 1 TO-220 1.
Base 2.
Collector 3.
Emitter Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol Parameter Value Units BVCBO Collector-Base Voltage 30 V BVCEO Collector-Emitter Voltage 30 V BVEBO Emitter-Base Voltage 5 V IC Collector Current 3 A PC Collector Dissipation (TC=25°C) 10 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
© 2009 Fairchild Semiconductor Corporation KSC1173 Rev.
A2 1 www.
fairchildsemi.
com KSC1173 — NPN Epitaxial Silicon Transistor Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Condition BVCBO BV...


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