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KSE350

Part Number	KSE350
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 9, 2020
Detailed Description	isc Silicon PNP Power Transistor KSE350 DESCRIPTION ·High Collector-Emitter breakdown voltage ·Low Collector Saturatio...
Datasheet	KSE350 PDF File

Overview

isc Silicon PNP Power Transistor KSE350 DESCRIPTION ·High Collector-Emitter breakdown voltage ·Low Collector Saturation Voltage ·Complement to Type KSE340 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage general purpose applications ·Suitable for transform ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -0.
5 A 20 W 1.
3 150 ℃ Tstg S...

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