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KSE350

Part Number	KSE350
Manufacturer	Fairchild Semiconductor
Description	PNP Epitaxial Silicon Transistor
Published	Apr 5, 2005
Detailed Description	KSE350 KSE350 High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Trans...
Datasheet	KSE350 PDF File

Overview

KSE350 KSE350 High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to KSE340 1 TO-126 2.
Collector 3.
Base 1.
Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value - 300 - 300 -5 - 500 20 150 - 65 ~ 150 Units V V V mA W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO ICBO IEBO hFE Parameter Collector-Emitter Breakdown Voltage Collector C...

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