DatasheetsPDF.com

ST180S

INCHANGE
Part Number ST180S
Manufacturer INCHANGE
Description Phase Control Thyristor
Published Sep 11, 2020
Detailed Description ST180S Phase Control Thyristors FEATURES ·Center amplifying gate ·Hermetic metal case with ceramic insulator (Also avai...
Datasheet PDF File ST180S PDF File

ST180S
ST180S

Overview
ST180S Phase Control Thyristors FEATURES ·Center amplifying gate ·Hermetic metal case with ceramic insulator (Also available with glass-metal seal up to 1200 V) ·International standard case TO-209AB (TO-93) ·Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·DC motor controls ·Controlled DC power supplies ·AC controllers ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VRRM VRSM Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage ST180S04 RATINGS ST180S08 ST180S12 ST180S16 UNIT 400 800 1200 1600 V 400 800 1200 1600 V SYMBOL PARAMETER IT(AV) Average Forward Current IT(RMS) Maximum RMS on-state current ITSM Max.
peak, one-cycle forward, non-repetitive surge current TJ Junction Temperature Tstg Storage Temperature Range CONDITIONS VALUE UNIT TC=85℃,180° conduction, half sine wave 200 A DC at 76℃ case temperature 360 A t = 10ms t = 8.
3ms t = 10ms t = 8.
3ms No voltage 5700 reapplied 5970 A 100% VRRM 4800 reapplied 5000 -40~125 ℃ -40~150 ℃ isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case ST180S Phase Control Thyristors MAX 0.
105 UNIT ℃/W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS TYPE MAX UNIT VTM Forward Voltage Drop Ipk = 570 A, TJ = 125 ℃, tp = 10 ms sine pulse 1.
75 V IDRM Max.
peak reverse and off-state IRRM leakage current IGT DC gate current required to trigger VGT DC gate voltage required to trigger tq Typical turn-off time TJ = TJ maximum, rated VDRM/VRRM applied 30 mA TJ = -40 ℃ TJ = 25 ℃ TJ = 125 ℃ TJ = -40 ℃ TJ = 25 ℃ TJ = 125 ℃ 180 90 150 mA 40 2.
9 1.
8 3 V 1.
2 ITM = 300A, TJ = TJ max, di/dt = 20A/µs, VR = 50V, dv/dt = 20V/µs, Gate 0V 100 Ω, tp = 500μs 100 µs isc website：www.
iscsemi.
cn 2 isc & iscsemi is ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)