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2SB613

Part Number	2SB613
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min) ·High Power ...
Datasheet	2SB613 PDF File

Overview

isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min) ·High Power Dissipation- : PC= 150W(Max)@TC=25℃ ·High Current Capability ·Complement to Type 2SD583 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -5 A 150 W 200 ℃ ...

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