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2SB674

INCHANGE
Part Number 2SB674
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 17, 2020
Detailed Description isc Silicon PNP Darlington Power Transistor 2SB674 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A ·Low ...
Datasheet PDF File 2SB674 PDF File

2SB674
2SB674

Overview
isc Silicon PNP Darlington Power Transistor 2SB674 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.
) @IC= 3.
0A ·Low Saturation Voltage : VCE(sat)= 1.
5V(Max.
)@ IC= 3.
0A ·Complement to Type 2SD634 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications.
·Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
2 ...


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