DatasheetsPDF.com

2SB691

Part Number	2SB691
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon PNP Power Transistor 2SB691 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good ...
Datasheet	2SB691 PDF File

Overview

isc Silicon PNP Power Transistor 2SB691 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD727 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier and power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 60 W 150 ℃ Tstg Storage Temperature...

Similar Datasheet

2SB600 PNP Transistor - INCHANGE
2SB600 SILICON POWER TRANSISTOR - SavantIC
2SB601 PNP Transistor - INCHANGE
2SB601 PNP Transistor - NEC
2SB601 SILICON POWER TRANSISTOR - SavantIC
2SB604 PNP Transistor - INCHANGE
2SB605 PNP SILICON TRANSISTOR - NEC
2SB608 PNP Transistor - INCHANGE
2SB609 SILICON POWER TRANSISTOR - SavantIC
2SB609 PNP Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)