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2SB696

Part Number	2SB696
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon PNP Power Transistors 2SB696 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Hig...
Datasheet	2SB696 PDF File

Overview

isc Silicon PNP Power Transistors 2SB696 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD732 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications.
·Recommended for output stage of 60W power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A ICM Emitter Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction...

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