DatasheetsPDF.com

2SB1133

Part Number	2SB1133
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearit...
Datasheet	2SB1133 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1666 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency and general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Tempe...

Similar Datasheet

2SB1100 Silicon PNP Power Transistors - Inchange Semiconductor
2SB1101 PNP Transistor - Hitachi Semiconductor
2SB1101 SILICON POWER TRANSISTOR - SavantIC
2SB1101 PNP Transistor - INCHANGE
2SB1102 PNP Transistor - Hitachi Semiconductor
2SB1102 SILICON POWER TRANSISTOR - SavantIC
2SB1102 PNP Transistor - INCHANGE
2SB1103 PNP Transistor - Hitachi Semiconductor
2SB1103 PNP Transistor - INCHANGE
2SB1103 SILICON POWER TRANSISTOR - SavantIC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)