DatasheetsPDF.com

2SB1134

Part Number	2SB1134
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Low Collector...
Datasheet	2SB1134 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.
4V(Max.
)@ IC= -3A ·Complement to Type 2SD1667 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers, high-speed inverters, and other general high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Coll...

Similar Datasheet

2SB1100 Silicon PNP Power Transistors - Inchange Semiconductor
2SB1101 PNP Transistor - Hitachi Semiconductor
2SB1101 SILICON POWER TRANSISTOR - SavantIC
2SB1101 PNP Transistor - INCHANGE
2SB1102 PNP Transistor - Hitachi Semiconductor
2SB1102 SILICON POWER TRANSISTOR - SavantIC
2SB1102 PNP Transistor - INCHANGE
2SB1103 PNP Transistor - Hitachi Semiconductor
2SB1103 PNP Transistor - INCHANGE
2SB1103 SILICON POWER TRANSISTOR - SavantIC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)