DatasheetsPDF.com

2SB1227

Part Number	2SB1227
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon PNP Darlington Power Transistor 2SB1227 DESCRIPTION ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC...
Datasheet	2SB1227 PDF File

Overview

isc Silicon PNP Darlington Power Transistor 2SB1227 DESCRIPTION ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -2.
5A) ·Large Current Capability and Wide ASO.
·Complement to Type 2SD1829 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in control of motor drivers, printer hammer drivers, and constant-voltage regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -8 A 2 W 25 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL ...

Similar Datasheet

2SB1201 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SB1201 Bipolar Transistor - ON Semiconductor
2SB1201 Transistors - Kexin
2SB1201 Silicon PNP Power Transistor - Inchange Semiconductor
2SB1202 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SB1202 Bipolar Transistor - ON Semiconductor
2SB1202 PNP Epitaxial Planar Silicon Transistors - GME
2SB1202 Silicon PNP Power Transistor - Inchange Semiconductor
2SB1202 PNP PLANAR TRANSISTOR - UTC
2SB1203 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)