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2SB1228

INCHANGE
Part Number 2SB1228
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 17, 2020
Detailed Description isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -4A) ·L...
Datasheet PDF File 2SB1228 PDF File

2SB1228
2SB1228


Overview
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -4A) ·Large Current Capability and Wide ASO.
·Complement to Type 2SD1830 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in control of motor drivers, printer hammer drivers, and constant-voltage regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Diss...



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