DatasheetsPDF.com

2SC5149

INCHANGE
Part Number 2SC5149
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 17, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage : VCBO= 1500V (Min) ·High Switching Speed ·Low Sat...
Datasheet PDF File 2SC5149 PDF File

2SC5149
2SC5149

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for medium resolution display color TV ·High speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICP Collector Current-Pulse 16 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5149 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO E...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)